EPC90123: 100 V, 25 A Half-Bridge Development Board
The EPC90123 development board is a 100 V maximum device voltage, 25 A maximum output current, half bridge with onboard gate drives, featuring the EPC2218 enhancement mode (eGaN®) field effect transistor (FET).
The EPC90123 development board measures 2” x 2” and contains two EPC2218 eGaN FETs and one EPC2038 eGaN FET in a half bridge configuration using the uPI Semiconductor uP1966E gate driver.
To simplify the evaluation process of the EPC2218 GaN FET, all the critical components are included on a single board that can be easily connected into any existing converter. Video: How to Turn an EPC Development Board into a Prototype