eGaN® FET-based power conversion systems offer higher efficiency, increased power density, and lower overall system cost than Si-based alternatives. These advantageous characteristics have spurred the presence of an ever increasing ecosystem of power electronics components such as gate drivers, controllers, and passive components that specifically enhance eGaN FET performance.
Semiconductor suppliers such as uPI Semiconductor, Texas Instruments and Microchip, continue to release drivers and controllers to meet the growing demand for GaN-based designs.
Below is a list of existing IC’s compatible with eGaN FETs:
How to GaN 04 – Design Basics: Gate Drive
In this video, the basic techniques for using GaN transistors in high-performance power conversion circuits is discussed. GaN transistors generally behave like power MOSFETs, but at much higher switching speeds and power densities. This video will focus on how to drive a GaN transistor to achieve maximum performance.