EPC brings enhancement mode to GaN, disrupting the power conversion market and enabling new applications. Compared to the aging silicon MOSFET, GaN FETs have higher switching speeds in a much smaller footprint. Optimized gate drive ICs and controllers help to extract the full advantage from this new, game-changing technology. For a more detailed discussion on gate drive requirements please see eGaN® FET Drivers and Layout Considerations.
As semiconductor suppliers continue to release driver ICs specifically optimized for eGaN FETs, the task of transitioning from silicon to eGaN technology will become even simpler and more cost effective.
Below is a list of existing IC’s compatible with eGaN FETs: