EPC2370 – 18 V GaN FET for High-Current DC-DC Conversion

VDS, 18 V
Typ RDS(on), 0.28 mΩ
ID, 101 A
Pulsed ID, 783 A

EPC2370 Enhancement Mode GaN Power Transistor
Package Size: 3.3 mm x 3.3 mm

Applications

  • High-speed DC-DC Convertion
  • Synchronous Rectification
  • Servers
  • Artificial Intelligence

Benefits

  • Ultra-low QG
  • Very low on-resistance (RDS(on))
  • Logic level
  • Light weight
  • PQFN package with backside thermal pad
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.

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