EPC1001 - Enhancement Mode Power Transistor

VDS, 100 V
RDS(on), 7 mΩ
ID, 25 A

EPC1001 Enhancement Mode GaN Power Transistor
Die Size: 4.1 mm x 1.6 mm

Applications

  • High Speed DC-DC Conversion
  • Hard Switched and High Frequency Circuits
  • Class D Audio

Benefits

  • Ultra High Efficiency
  • Ultra Low RDS(on)
  • Ultra Low QG
  • Ultra small footprint
Status: Obsolete
Use EPC2001 for new designs
Ask and EPC Engineer a Question FAQ

Have a question about EPC eGaN FETs and ICs?
Ask a GaN Expert