EPC23101: 100 V, 65 A ePower™ Chipset

Features

• Integrated high side eGaN^® FET with internal gate driver
• High Side FET R_DSon, 3.3 mΩ
• Gate driver output to drive external low side eGaN FET
• 5 V external bias supply
• Independent high side and low side control inputs
• 3.3 V or 5 V CMOS input logic levels
• High switching frequency, up to 3 MHz
• Robust level shifter operating for hard and soft switching conditions
• False trigger immunity from fast switching transients
• Synchronous charging for high side bootstrap supply
• Undervoltage lockout for internal high side bias supplies
• Chipset of compatible high and low side devices in QFN packages with optimized pinouts between the two devices (See EPC2302)
• Thermally enhanced package with exposed top (Rthjc = 0.4 degC/W) & wettable flank