EPC2370 – 18 V GaN FET for High-Current DC-DC Conversion

VDS, 18 V
Typ RDS(on), 0.28 mΩ
ID, 151 A
Pulsed ID, 808 A

EPC2370 Enhancement Mode GaN Power Transistor
Package Size: 3.3 mm x 3.3 mm

Applications

  • High-speed DC-DC Convertion
  • Synchronous Rectification
  • Servers
  • Artificial Intelligence

Benefits

  • Ultra-low QG
  • Very low on-resistance (RDS(on))
  • Logic level
  • Light weight
  • PQFN package with backside thermal pad
Status: Active

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EPC90168 18 V, 82 A half-bridge evaluation

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