EPC7014 - Rad Hard Enhancement Mode Power Transistor

VDS, 60 V
RDS(on), 340 mΩ
ID, 2.4 A
Pulsed ID, 4 A
95%Pb/5%Sn solder

EPC7014 Enhancement Mode GaN Power Transistor
Die Size: 0.9 mm x 0.9 mm


  • Commercial satellite EPS & avionics
  • Deep space probes
  • High frequency Rad Hard DC-DC conversion
  • Rad Hard motor drives


  • Ultra-high efficiency
  • Ultra-low gate charge
  • Ultra-small footprint
  • Lightweight
  • Total dose
    • Rated > 1 Mrad
  • Single event
    • SEE immunity for LET of 85 MeV/(mg/cm2) with VDS up to 100% of rated breakdown
  • Neutron
    • Maintains Pre-Rad specification for up to 3 x 1015 Neutrons/cm2
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
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