GaN-Based Power Delivery in AI Data Centers

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AI’s rapid growth and the widespread deployment of the data centers needed to support it are fundamentally reshaping data center design—not only in terms of compute density and cooling requirements, but also through the adoption of new power delivery architectures. One emerging approach is to distribute power at 800 VDC directly to the rack while performing the final voltage conversion as close to the load as possible. This white paper examines the key power conversion stages required to step down from an 800 VDC distribution bus to intermediate and point-of-load (POL) voltage rails, including 48 V, 12 V, and 6 V. It highlights the role of EPC eGaN® FETs—including the EPC2304, EPC2305, and Gen7 low-voltage products—in enabling high-frequency, high-efficiency LLC and hybrid switched-capacitor (HSC) converter topologies. Practical reference designs are presented to demonstrate solutions that deliver both high power density and exceptional efficiency.

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