Events

Visit the GaN Experts at PCIM Asia 2024

Stop by Hall 11, Stand F01 at PCIM Asia to get the latest news on GaN technology, products, and applications. Schedule a meeting during PCIM to discuss your design by sending a request to [email protected]

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Plenary: GaN Technologies for the new generation of Electric Motor Drives

Speaker: Alex Lidow

GaN Reliability and Lifetime Projections

Speaker: Alex Lidow

The rapid adoption of GaN devices in many diverse applications calls for continued accumulation of reliability statistics and research into the fundamental physics of failure in GaN devices. This talk presents the strategy used to measure and predict GaN device lifetime based upon tests that force devices to fail under a variety of conditions. This information can be used to create stronger and higher performance products for the industry.

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GaN FET Model Validation Via Experimental Multiple Pulse Test

Speaker: Vincenzo Barba

In power electronics design, validating the electronics switches' models is essential. The most recent transistor in wide-bandgap technology is the Gallium-Nitride FET (GaN FET). Several transistor models are developed to use the GaN FET in converter design. The more accurate device equivalent circuits are based on the Curtice and Angelov model. This paper deals with a model description and experimental validation of a normally-off GaN FET. In the paper, the validation is achieved by overlapping comparisons of the waveforms obtained from the model simulations implemented in LTSpice software with the experimental waveforms. Experimental boards with GaN FET in a half-bridge configuration have been used to test the device, considering fast and slow switching performance. Multiple pulse tests are experimentally conducted to measure the voltage and current waveforms of the GaN FET under test. Various current sensor solutions are explored and compared to sense the transistor current during the turn-on and turn-off transients, such as indirect measurement via a shunt resistor, a Rogowski coil, and a Hall effect current probe. The results obtained allow the converter designer to use the model to simulate complex power converter topologies with satisfactory certainty that the simulated GaN FETs represent an actual operating situation in static and switching conditions.

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What a Long Strange Trip It’s Been

Speaker: Alex Lidow

GaN devices have passed the tipping point in several applications as this wonderful wide bandgap semiconductor marches toward the obsolescence of the aging silicon MOSFET. In this keynote there will be a brief trip down memory lane to recount some of the key lessons learned beginning with the power MOSFET’s takeover of the power conversion space from the incumbent bipolar transistor. Similarities and differences will be highlighted as one application after another converts from silicon to GaN transistors. The roadmap for the next few years to be discussed at the end is a reflection of these experiences.

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Visit with the EPC GaN Experts at WiPDA 2024!

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See you at electronica 2024!

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