Events

Visit EPC at PCIM Europe 2025

Visit EPC at PCIM Europe 2025

PCIM Europe 2025

Tuesday, May 6, 2025 - Thursday, May 8, 2025 Nuremberg, Germany

Visit EPC in Hall 9, Stand 318 at PCIM Europe 2025 in Nuremburg, Germany. EPC is proud to showcase the industry’s most comprehensive portfolio of Gallium Nitride (GaN) power conversion solutions in real-world applications.

Schedule a meeting with our team of GaN Experts

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EPC Schedule of Events

Tuesday, 6 May 2025

Poster Presentation: GaN-Based 5 kW Four-Level Totem-Pole PFC Converter for AI Servers Power Supply
Speaker: Marco Palma

Presenting a compact flying capacitor multilevel (FCML) totem-pole bridgeless power-factor correction (PFC) rectifier for the high-efficiency and high-density switching power supplies of AI Servers. It is based on a 5 kW four-level FCML totem-pole PFC employing 200 V GaN devices. The PFC is designed to follow the latest Open Compute Project (OCP) guidelines.

Wednesday, 7 May 2025

Bodo’s Power Systems – GaN Expert Panel at PCIM 2025
Panelist: Alex Lidow, Ph.D.

Bodo’s Power Systems will host a GaN Expert Panel at PCIM 2025, where leading voices in power electronics will discuss the latest innovations, challenges, and market trends driving the adoption of gallium nitride (GaN) technology. Don’t miss this opportunity to engage with industry pioneers shaping the future of wide bandgap power electronics.

Wednesday, 7 May 2025

5 kW Isolated 400 V to 50 V, DC-DC Converter for Server Power Supplies
Speaker: Michael de Rooij

The increasing power demand in data centers is driving the need for converters with higher power density and efficiency. This paper presents a solution for the isolation stage in a sever-rack power supply, that complies with the Open Compute ORv3 specification [1]. The solution comprises four LLC converters with stacked primaries and paralleled secondaries, between the 400 V input and 50 V output. Two transformer alternatives are presented to achieve highest peak efficiency (~98.5 %) or highest full load efficiency (~98 %). The converter can continuously process 5.5 kW and fits in a 80 x 70 x 27 mm volume, realizing a power density of 596 W/in3 (36.4 W/cm3).

Thursday, 8 May 2025

Design of GaN FET-Based Multilevel Three-Phase Inverter for High Voltage Automotive Applications
Speaker: Fabio Mandrile, Polytechnical University of Turin

Presents the design, layout, and realization of a four-level flying-capacitor multilevel (FCML) three-phase 400 V DC, 50 ARMS traction inverter for automotive applications. The inverter acts both as a demonstrator and a fundamental building brick for a modular solution at higher power.

Thursday, 8 May 2025

Next Generation GaN Platform for High-Density DC-DC Converters
Speaker: Alex Lidow, Ph.D.

The next-generation GaN platform is driving a significant leap in high-density DC-DC converter technology, offering unprecedented performance improvements over traditional silicon-based solutions. This presentation explores the evolution of 100 V and 40 V GaN devices, showcasing their role in 48V-to-12V power conversion. This session highlights how GaN technology is revolutionizing power conversion, providing the foundation for smaller, more efficient, and lower-cost solutions in high-performance applications.

Webinar: GaN for High-Efficient Motor Drives for Humanoid Robots, Drones, and eMobility

Webinar: GaN for High-Efficient Motor Drives for Humanoid Robots, Drones, and eMobility

May 7, 2025 10:00 am CST (Beijing time) Online

Speaker: Hu Chen, Senior Field Application Engineer, EPC

Sponsored by EETimes China

New applications such as humanoid robots have placed higher demands on high-efficiency and compact-sized motors. In this webinar, EPC's field applications engineer will share GaN design techniques for motor drive applications. We will provide an in-depth understanding of how to leverage GaN, which has higher switching frequency, shorter dead time, lower on-resistance, and faster switching speed to design drives with high efficiency.

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eePower Asia 2025: Increasing Power Density using Low Voltage eGaN FETs in High-Voltage Server Power

eePower Asia 2025: Increasing Power Density using Low Voltage eGaN FETs in High-Voltage Server Power

May 27, 2025 9:30 am – 11:15 am CST (Beijing time) Online

Speaker: Pei-Cheng Huang, Field Application Engineer, EPC

Sponsored by EETimes China

The increasing power demand in data centers, led by advances in artificial intelligence, is driving the need for converters with higher power density and efficiency. These converters typically consist of two stages: a Power Factor Correction (PFC) circuit and an Isolated DC-DC converter. The PFC operates from a supply voltage of 240 VAC and generates a 400 VDC bus. The DC-DC stage down converts to 50 V while providing isolation. In addition, such power supplies must comply with the recent requirements released by the Open Compute ORV3 standard and fit within the specific form factor and dimensions.

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Primary Wearout Mechanism Responsible for Schottky-Type pGaN Gate and First-Principles Lifetime Modeling in GaN HEMTs

Primary Wearout Mechanism Responsible for Schottky-Type pGaN Gate and First-Principles Lifetime Modeling in GaN HEMTs

Compound Semiconductor Week 2025

May 30, 2025 Banff, Alberta

Speaker:Shengke Zhang, Ph.D.

This paper investigates the primary wearout mechanism in Schottky-type pGaN gate high-electron-mobility transistors (HEMTs). Leveraging empirical data and physics-based insights, a first-principles lifetime model is developed that accurately predicts gate wearout under various stress conditions. The proposed model enables precise reliability forecasting for power GaN HEMTs in demanding applications such as automotive and industrial systems. Results demonstrate strong correlation with accelerated life testing, offering a robust framework for device qualification and lifetime assurance.

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