Events

eePower Asia 2025: Increasing Power Density using Low Voltage eGaN FETs in High-Voltage Server Power

eePower Asia 2025: Increasing Power Density using Low Voltage eGaN FETs in High-Voltage Server Power

May 27, 2025 10:15 am – 10:35 am CST (Beijing time) Online

Speaker: Pei-Cheng Huang, Field Application Engineer, EPC

Sponsored by EETimes China

The increasing power demand in data centers, led by advances in artificial intelligence, is driving the need for converters with higher power density and efficiency. These converters typically consist of two stages: a Power Factor Correction (PFC) circuit and an Isolated DC-DC converter. The PFC operates from a supply voltage of 240 VAC and generates a 400 VDC bus. The DC-DC stage down converts to 50 V while providing isolation. In addition, such power supplies must comply with the recent requirements released by the Open Compute ORV3 standard and fit within the specific form factor and dimensions.

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Primary Wearout Mechanism Responsible for Schottky-Type pGaN Gate and First-Principles Lifetime Modeling in GaN HEMTs

Primary Wearout Mechanism Responsible for Schottky-Type pGaN Gate and First-Principles Lifetime Modeling in GaN HEMTs

Compound Semiconductor Week 2025

May 30, 2025 Banff, Alberta

Speaker:Shengke Zhang, Ph.D.

This paper investigates the primary wearout mechanism in Schottky-type pGaN gate high-electron-mobility transistors (HEMTs). Leveraging empirical data and physics-based insights, a first-principles lifetime model is developed that accurately predicts gate wearout under various stress conditions. The proposed model enables precise reliability forecasting for power GaN HEMTs in demanding applications such as automotive and industrial systems. Results demonstrate strong correlation with accelerated life testing, offering a robust framework for device qualification and lifetime assurance.

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Webinar: Maximum Efficiency and Power – GaN

Webinar: Maximum Efficiency and Power – GaN

June 5, 2025 10:00 AM CDT Online

In an increasingly power-hungry world, the need for efficient and compact power solutions has never been more critical. Join us for an insightful session that will showcase how the latest GaN technology from EPC, combined with dedicated GaN controllers from Analog Devices, is setting new benchmarks in high-performance power conversion.

We will introduce a series of joint reference designs that deliver unprecedented power output, thermal efficiency, and board space savings—ideal for applications like AI servers, industrial robotics, and advanced DC-DC conversion. Whether you're designing for compact size, lower losses, or faster switching, this will give you practical insights and ready-to-use solutions.

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