Events

<h2>GaN for Space Applications</h2>

Wednesday, January 15, 2025 7:00 AM - 8:30 AM

GaN for Space Applications


Location: Virtual Event

Centre for Semiconductor Technologies (SemiX) Webinar Series

GaN for Space Applications
Alex Lidow, Ph.D.

Abstract:

Gallium Nitride (GaN) technology is transforming the landscape of space electronics by offering significant advantages over traditional silicon MOSFETs. This webinar, led by EPC CEO Alex Lidow, explores the critical factors for success in space, including size, weight, efficiency, reliability, and radiation resistance. Attendees will gain insights into EPC's cutting-edge GaN platform evolution, performance comparisons, and real-world applications of GaN transistors and integrated circuits in space systems.

Key Topics:

  • GaN vs. Silicon: Performance, Radiation Resistance, and Efficiency
  • Product Overview: Discrete and Integrated Power Stages for Space
  • Real-world Deployments and Success Stories

Registration information coming soon

<h2>Visit EPC at APEC 2025</h2>

Sunday, March 16, 2025 - Thursday, March 20, 2025

Visit EPC at APEC 2025


Location: Atlanta, GA

Visit EPC in Booth # 1231 at the Applied Power Electronics Conference (APEC) in Atlanta, Georgia. EPC is proud to showcase the industry’s most comprehensive portfolio of Gallium Nitride (GaN) power conversion solutions in real-world applications. 

More details to follow.

<h2>Compound Semiconductor Asia Conference 2025, SEMICON China</h2>

Tuesday, March 25, 2025 - Tuesday, March 25, 2025

Compound Semiconductor Asia Conference 2025, SEMICON China


Location: Shanghai, China

Next Generation GaN Platform for High-Density DC-DC Converters

Speaker: Joe Cao, PhD.

www.semiconchina.org

<h2> EPE’25</h2>

Monday, March 31, 2025 - Friday, April 4, 2025

EPE’25


Location:

Paris, France

This paper investigates the impact of parasitic capacitance on the switching operation of GaN FETs connected in parallel. An experimental board was developed to study current-sharing features during switching transients, with each device driven independently and monitored using individual source shunts. Simulation and experimental results provide insights into the influence of parasitic capacitances on transient current peaks, identifying the maximum allowable capacitance for reliable operation. These findings support the design of robust power modules utilizing paralleled GaN FETs for high-current applications.

Speaker: Professor Salvatore Musumeci (Politecnico di Torino)

https://epe2025.com/

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