Lidar Demos

3D Time of Flight Lidar Seminar

Lidar Time of Flight

Lidar Reference Designs

Part
Number
Description VBUS
(max)
VINPUT
(max)
TPin
(min)
Max Pulse (A) Featured Product Schematic Gerber Bill of
Materials
EPC9144 High Current Pulsed Laser Diode Driver Demo Board 12 5 1 ns 28 EPC2216 Buy Now
EPC9126 High Current Pulsed Laser Diode Driver Demo Board 80 5 6 ns 75 EPC2212 Buy Now
EPC9126HC High Current Pulsed Laser Diode Driver Demo Board 80 5 6 ns 150 EPC2001C Buy Now
Vendor Part Number Description Max Pulse
(A)
Pulse Width Featured eGaN Product Vendor Link
Texas InstrumentsLMG1020EVM-006Lidar Evaluation Module401 ns - 2 nsEPC2019LMG1020EVM-006
Texas InstrumentsTIDA-01573Nanosecond Laser Driver Reference Design for Lidar601 nsEPC2019TIDA-01573

Recommended Devices for Lidar Designs

Part
Number
Configuration VDS Max
RDS(ON)
(mΩ)
(VGS = 5 V)
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
Max. Peak Pulsed ID(A)
(25°C, Tpulse = 300µs)
Package
(mm)
Half-Bridge
Development
Boards
EPC2216 Single 15 26 0.87 0.21 0.13 0.53 28 BGA 0.85 x 1.2 N/A
EPC2040 Single 15 30 0.745 0.23 0.14 0.42 28 BGA 0.85 x 1.2 N/A
EPC2015C Single 40 4 8.7 2.7 1.2 19 235 LGA 4.1 x 1.6 EPC9201
EPC2014C Single 40 16 2 0.70 0.30 4 60 LGA 1.7 x 1.1 EPC9005C
EPC8004 Single 40 110 0.37 0.120 0.047 0.63 7.5 LGA 2.1 x 0.85 EPC9066
EPC2035 Single 60 45 0.88 0.3 0.2 3 24 BGA 0.9 x 0.9 EPC9049
EPC8009 Single 65 130 0.37 0.120 0.055 0.94 7.5 LGA 2.1 x 0.85 EPC9067
EPC2202 Single (AEC-Q101) 80 17 3.2 1 0.55 18 75 LGA 2.1 x 1.6 N/A
EPC2214 Single (AEC-Q101) 80 20 1.8 0.5 0.3 8 47 BGA 1.35 x 1.35 N/A
EPC2039 Single 80 25 2.4 0.76 0.42 7.6 50 BGA 1.35 x 1.35 EPC9057
EPC2203 Single (AEC-Q101) 80 80 0.67 0.22 0.12 3.6 17 BGA 0.9 x 0.9 N/A
EPC2053 Single 100 3.8 12 4.1 1.5 45 246 BGA 3.5 x 2 EPC9093
EPC2045 Single 100 7 5.2 1.7 1.1 21 130 BGA 2.5 x 1.5 EPC9078
EPC2001C Single 100 7 7.5 2.4 1.2 31 150 LGA 4.1 x 1.6 EPC9002C
EPC2212 Single (AEC-Q101) 100 13.5 3.2 0.9 0.6 18 75 LGA 2.1 x 1.6 N/A
EPC2052 Single 100 13.5 3.6 1.5 0.5 13 74 BGA 1.5 x 1.5 EPC9092
EPC2016C Single 100 16 3.4 1.1 0.55 16 75 LGA 2.1 x 1.6 EPC9010C
EPC2051 Single 100 25 1.8 0.6 0.3 7.2 37 BGA 1.3 x 0.85 EPC9091
EPC2007C Single 100 30 1.6 0.6 0.3 8.3 40 LGA 1.7 x 1.1 EPC9006C
EPC2036 Single 100 65 0.7 0.17 0.14 3.9 18 BGA 0.9 x 0.9 EPC9050
EPC8010 Single 100 160 0.36 0.130 0.060 2.2 7.5 LGA 2.1 x 0.85 EPC9068
EPC2037 Single 100 550 0.115 0.032 0.025 0.6 2.4 BGA 0.9 x 0.9 EPC9051
EPC2038 Single 100 3300 0.044 0.020 0.004 0.134 0.5 BGA 0.9 x 0.9 EPC9507

GaN Reliability

This Phase 11 reliability report adds to the growing knowledge base published in the first ten reports [1-10] and covers several key new topics. Gallium nitride (GaN) power devices have been in volume production since March 2010 and have established a remarkable field reliability record. This report will discuss the strategy used to achieve this track record that relied upon tests forcing devise to fail under a variety of conditions to create strong and strong products for the industry.

Alejandro Pozo Ph.D., Shengke Zhang Ph.D., Ricardo Garcia, John Glaser Ph.D., Zhikai Tang Ph.D., and Robert Strittmatter Ph.D, Efficient Power Conversion Corporation

Download Reliability Report

Phase 11 reliability