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Modern solar panels are demanding increasingly higher power density and longer operating lifetimes. Solar applications including power optimizers and panels with built-in microinverter are becoming the prevailing trend for an increasing number of solar customers. Gallium nitride (GaN) power transistors and integrated circuits offer solutions that can make solar power systems smaller, cooler, more efficient, and more reliable.
Greater than 25 years of reliable operation is a typical requirement for solar installations, so in this webinar we will delve into the pioneering approach of utilizing Test-to-Fail methodology to accurately predict the lifespan of eGaN devices, which have demonstrated their potential to surpass the 25-year mark in solar applications.
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Speaker: Dr. Shengke Zhang is Vice President of Product Reliability at EPC, where he leads the conduction of failure analyses for all GaN transistors and ICs. Prior to joining EPC, he worked as Sr. Failure Analysis Engineer on RF-MEMS devices in the mobile industry. He earned his Ph.D. degree in Materials Science and Engineering from Arizona State University in 2016, under Dr. Nathan Newman, in investigating low-loss dielectrics for cellular and advanced computing applications. He received his B.S. degree from Huazhong University of Science and Technology 2011. He was the author and co-author of more than 20 technical papers. He is also a committee member and internal liaison for JEDEC's JC-70 Wide Bandgap Power Electronic Conversion Semiconductors Committee.
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