How to GaN Webinar Series

Reliability Webinar

Understanding Why GaN is More Robust than Silicon Power MOSFETs

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Watch the on-demand webinar to learn about the critical aspects of GaN power device reliability and how testing gallium nitride devices to failure demonstrates robustness unmatched by silicon power MOSFETs.

Watch the webinar to learn more about:

  • How the key mechanisms impacting dynamic RDS(on) have been identified and used to create more robust designs.
  • How several eGaN® products were tested exhaustively throughout their data sheet safe operating area (SOA), and then taken to failure to probe the safety margins.
  • How eGaN devices are tested to destruction under short-circuit conditions to determine how long and what energy density they withstand before catastrophic failure.
  • How EPC developed a custom system to assess eGaN reliability over long-term lidar pulse stress conditions.

Click here to see full webinar schedule

Shengke Zhang.png

Speaker: Dr. Shengke Zhang is Manager of Failure Analysis and Reliability at EPC, where he leads the conduction of failure analyses for all GaN transistors and ICs. Prior to joining EPC, he worked as Sr. Failure Analysis Engineer on RF-MEMS devices in the mobile industry. He earned his Ph.D. degree in Materials Science and Engineering from Arizona State University in 2016, under Dr. Nathan Newman in investigating low loss dielectrics for cellular and advanced computing applications. He received his B.S. degree from Huazhong University of Science and Technology in 2011. He was the author and co-author of more than 20 technical paper. He also serves as a committee member and internal liaison member for JEDEC's JC-70 Wide Bandgap Power Electronic Conversion Semiconductors Committee.

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