New EPC2107 and EPC2108 eGaN® power integrated circuits include monolithic half bridge and integrated bootstrap functions for A4WP compliant Class 2 and Class 3 solutions. In addition, development boards and complete wireless power solutions – transmit and receive devices – for quick and easy evaluations of these components are available.
EL SEGUNDO, Calif. — July 2015 — EPC announces the EPC2107 (100 V) and EPC2108 (60 V) eGaN half bridge power integrated circuits with integrated bootstrap FET, eliminating gate driver induced reverse recovery loses as well as the need for a high side clamp. This is the first time that a bootstrap FET has been integrated in an eGaN power circuit.
Designed specifically for resonant wireless power transfer applications, these products enable rapid design of highly efficient end-user systems, setting the stage for mass adoption of wireless power transfer. In addition, these GaN power integrated circuits come in extremely small, chip-scale packages, reducing the size of the overall system. This new line of chips is lower in cost due to reduced overall component count – one GaN device versus three FETs!
Rezence™ Wireless Power Standard
Although there are several standards for wireless power transfer, the A4WP standard, Rezence, offers superior features and capabilities to end users – the consumer. For example, Rezence allows for spatial freedom when charging, eliminating the need for exact positioning of devices when charging. It also has an exceptional charging range, providing consumers with true ‘drop and go’ charging. Additionally, the standard allows for charging multiple devices with different power requirements simultaneously. Another key feature is that Rezence compliant wireless power systems will charge devices in the presence of metallic objects such as keys, coins, and utensils, making it an ideal choice for automotive, retail, and household applications.
In short, Rezence provides the flexibility and capabilities to bring wireless charging to the masses, a rapidly emerging market that is expected to be a $15.6 B industry by 2020.
EPC’s gallium nitride devices play a major role in this market, having introduced the first eGaN FET for wireless power transfer in 2012. In addition to designing A4WP Rezence compliant power products, EPC has published a Wireless Power Handbook dedicated to addressing wireless power systems design issues such as multi-mode operation and EMI compliance.
EPC’s New Products and Benefits
By integrating two eGaN® power FETs into an integrated power circuit, interconnect inductances and the interstitial space needed on the PCB are eliminated. Having this single integrated power component increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the wireless power system designer&