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What's Not to Like About GaN?

What's Not to Like About GaN?

GaN FETs are revolutionizing power electronics - faster, smaller, and CHEAPER than silicon MOSFETs. In this video from PCIM Europe 2025, EPC CEO Alex Lidow explains why GaN technology is now powering AI servers, satellites, and robotics. Learn how wide band gap semiconductors achieve 10x better performance than silicon, why GaN is actually less expensive at 100-200V, and how the new Gen 7 devices are 3x smaller than previous generations.

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Why is GaN More Reliable Than Silicon?

Why is GaN More Reliable Than Silicon?

GaN (Gallium Nitride) FETs are revolutionizing power electronics with superior reliability compared to traditional silicon semiconductors. In this video from PCIM Europe 2025, EPC CEO Alex Lidow explains the fundamental advantages of GaN technology for power conversion applications. Learn why GaN devices can operate at 300°C while silicon fails, understand the absence of the Spirito effect in GaN FETs, and discover how these wide bandgap semiconductors achieve radiation immunity for space applications.

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GaN Takes on Lower Voltages

GaN Takes on Lower Voltages

As GaN (gallium nitride) technology continues to mature, its applications are expanding into lower voltage domains—traditionally dominated by silicon MOSFETs. In this insightful article, discover how GaN’s superior efficiency, reduced switching losses, and compact form factor are transforming power conversion in consumer electronics, automotive systems, and edge computing and ushering in a new era of innovation in low voltage power design.

Components in Electronics
June 2025
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The retreat of the MOSFETs?

The retreat of the MOSFETs?

In this op-ed, Alfred Vollmer explores the accelerating shift from traditional silicon MOSFETs to wide bandgap (WBG) semiconductors—particularly gallium nitride (GaN) and silicon carbide (SiC). GaN devices are conquering more and more terrain that was formerly a pure domain of Silicon MOSFETs.

Bodo’s Power Systems
June 2025
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Design Techniques and Real-World Implementations of GaN-Based Multilevel Converters

Design Techniques and Real-World Implementations of GaN-Based Multilevel Converters

Modern power systems demand higher efficiency, increased power density, and reduced electromagnetic interference (EMI)—all while adhering to shrinking size constraints. Among the converter topologies addressing these challenges, the Flying Capacitor Multilevel (FCML) converter stands out for its unique advantages. When combined with Gallium Nitride (GaN) power transistors, FCML converters offer an unprecedented level of performance, particularly in the realm of medium-voltage applications such as 48 V data center power delivery, battery management systems, and high-efficiency power factor correction (PFC) circuits.

Power Systems Design
June 2025
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Increasing Power Density using Low Voltage eGaN FETs in High-Voltage Sever Power Supplies – Part 2: The Multi-Level Totem-Pole PFC converter

Increasing Power Density using Low Voltage eGaN FETs in High-Voltage Sever Power Supplies – Part 2: The Multi-Level Totem-Pole PFC converter

In part one of this series, we gave a brief introduction to the multi-level totem-pole PFC topology and how it can improve power density in server applications. In this second part we dive deeper into the design details of such a solution and present experimental results for a 240 VAC input to 400 VDC output, 5 kW PFC system.

Bodo’s Power Systems
May 2025
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Video: Next Generation GaN Platform for High-Density DC-DC Converters

Video: Next Generation GaN Platform for High-Density DC-DC Converters

The next-generation GaN platform is driving a significant leap in high-density DC-DC converter technology, offering unprecedented performance improvements over traditional silicon-based solutions. In this presentation, Alex Lidow explores the evolution of 100 V and 40 V GaN devices, showcasing their role in 48V-to-12V power conversion. This session highlights how GaN technology is revolutionizing power conversion, providing the foundation for smaller, more efficient, and lower-cost solutions in high-performance applications.

PCIM Technology Stage
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APEC 2025: Industry Crafts Vertical Power Delivery Solutions For AI Processors

APEC 2025: Industry Crafts Vertical Power Delivery Solutions For AI Processors

This month’s How2Power newsletter covers EPC’s participation at APEC 2025. At the show, EPC showcased a life-sized server display and cutting-edge GaN-based power converters, including a 48 V to 12 V LLC reference design delivering over 95.5% efficiency and >5 kW/in³ power density. CEO Alex Lidow also revealed a compact 5 kW AC-DC power supply that exceeds 100 W/in³, highlighting GaN’s impact on server power architectures. On the robotics front, EPC’s humanoid ambassador “Greg” and a miniaturized GaN inverter for motor joints illustrated why GaN is quickly becoming essential in the world of intelligent machines.

How2Power
April, 2025
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Design High-Efficiency Solar Optimizers with GaN FETs

Design High-Efficiency Solar Optimizers with GaN FETs

Enhancing Photovoltaic System Performance with Compact, Reliable, Cost-Effective GaN Technology

EL SEGUNDO, Calif.— December, 2024 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices, proudly announces the launch of the EPC9178, the latest reference design for photovoltaic (PV) optimizers. Designed to deliver high reliability while addressing critical challenges in energy efficiency and cost-effectiveness through the reduction of passive components in solar energy systems, the EPC9178 demonstrates the transformative potential of GaN technology for renewable energy solutions.

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GaN and the Future of Untethered Robots

GaN and the Future of Untethered Robots

At electronica 2024, on the DigiKey booth, Caitlin Gittins spoke with Alex Lidow, CEO, EPC about GaN and the future of untethered robots. After introducing EPC and explaining the unique benefits of GaN compared to traditional silicon-based semiconductors, the conversation explores EPC’s specific GaN solutions and their applications in robotics. The discussion touches on the concept of humanoid robots, contrasting them with conventional robotic arms, and EPC’s outlook on robotics’ future. It examines how GaN is advancing the robotics industry by enhancing autonomy and efficiency and discuss EPC’s recommendations for developers adopting GaN in their designs. The conversation concludes with how EPC is positioning itself to meet the evolving demands of robotics and AI-driven humanoid robots.

Electronic Specifier
November, 2024
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Compact, High Performance, Next Generation PV Optimizers using eGaN FETs and dedicated ASIC Controller

Compact, High Performance, Next Generation PV Optimizers using eGaN FETs and dedicated ASIC Controller

The adoption of photovoltaic (PV) systems continues to grow, and the ever-present pressure on manufacturers drives innovation and the adoption of new technologies to reduce cost without compromising reliability. As renewable energy systems continue to evolve, the use of innovative technologies like GaN FETs will be key to driving further improvements in cost, performance, and reliability across the industry.

Bodo’s Power Systems
November 2024
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PCIM Europe 2024: A Conversation with Alex Lidow, CEO of EPC

PCIM Europe 2024: A Conversation with Alex Lidow, CEO of EPC

Video: Alex Lidow discusses the latest trends in power electronics showcased at the PCIM conference, the evolution of GaN technology, and its impact on sustainability and energy costs. He also shares insights on overcoming technological and regulatory hurdles and forecasts future innovations that will shape the power electronics market.

Power Electronics News
June, 2024
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GaN ICs simplify Motor Joint Inverter Design for Humanoid Robots

GaN ICs simplify Motor Joint Inverter Design for Humanoid Robots

Battery-powered applications such as new-generation robots, drones, and power tools require a reduction in space and a simplification of the design to control electric motors. Optimizing size and components results in innovative solutions that include more functions in a small space without losing efficiency and performance. EPC ePower™ Stage ICs technology helps to simplify and improve the inverter design in advanced motor control applications.

Bodo’s Power Systems
June, 2024
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Cascade of Power

Cascade of Power

Power semiconductors are used across many areas of e-mobility, with different technologies suitable for each part of a vehicle, depending on the voltage and current requirements, while emerging tech is allowing smaller systems to be implemented. With GaN and SiC technologies maturing and coming down in price, adoption is growing, and the technologies are increasingly dominating the design and development of e-mobility powertrain and power systems.

E-Mobility Engineering
March 2024
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Experts Weigh in on GaN & SiC at APEC 2024

Experts Weigh in on GaN & SiC at APEC 2024

In this video from Power Electronics News, a lineup of distinguished speakers from semiconductor companies shares insights into groundbreaking developments in gallium nitride– and silicon carbide–based power devices.

The GaN speakers address two critical questions shaping the future of wide bandgap:

  1. The significance of substrate material choice for GaN-based power devices. They elaborate on how this choice impacts device performance, reliability and manufacturability and discuss how researchers are tackling substrate-related challenges.
  2. Specific market segments where GaN devices are outperforming traditional silicon-based solutions, driving adoption and revealing the technology direction of their respective companies. The speakers include:
    • Robert Taylor, applications engineer/general manager industrial applications at Texas Instruments
    • Michael de Rooij, VP of applications engineering at EPC
    • Balu Balakrishnan, CEO of Power Integrations

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