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Model Behavior to Determine GaN Performance

Model  Behavior to Determine GaN Performance

Users of GaN FETs and ICs now have a tool to determine the derating needed in an application and reduce voltage derating factors. EPC has developed a first principle physics-based model to explain RDS(on) rise in GaN transistors under hard switching conditions. This article provides demonstrations for two synchronous rectification application examples.

Electronic Specifier
May, 2022
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