Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates.
Accelerated development of eGaN FETs as silicon MOSFET come to the end of the road
With eGaN® FETs' high-performance capabilities, we have seen rapid adoption in applications for efficient DC/DC conversion, POL converters, Class D audio amplifier and high frequency circuits. Texas Instruments’ introduction of the industry's first 100V, half-bridge GaN FET driver (LM5113), optimized for use with enhancement-mode GaN (eGaN) field-effect transistors (FETs),has further propelled such an accelerated adoption pace in applications like high-performance telecom power supplies, networking and datacom centers.
EDN China April 2012 Print Issue
EDN China April 2012