Conference Sessions
The Future of Untethered Robotics: GaN-Powered Solutions for Mobility, AI, and Machine Vision
As we advance towards a future where robots operate independently, gallium nitride (GaN) emerges as a transformative technology, providing superior solutions for mobility, artificial intelligence (AI), and machine vision in robots. This keynote will explore the transformative impact of GaN on these key areas, highlighting its role in enhancing motor drive efficiency, enabling sophisticated AI functionalities, and improving machine vision capabilities. Discover how GaN-powered solutions are set to revolutionize the future of robotics, making autonomous robots more efficient, intelligent, and perceptive than ever before.
Presenter: Alex Lidow
Exhibitor Forum: August 28th , 12:10pm - 12:30pm
Comprehensive Board Level Temperature Cycling Lifetime Projection of WLCSP GaN Power Devices
Wafer level chip scale packaged (WLCSP) gallium nitride (GaN) power devices have been deployed in increasingly more advanced applications that demand high board-level temperature cycling (TC) reliability. In this study, by implementing test-to-fail methodology [1], a comprehensive TC lifetime model is developed, accounting for different device sizes and varying land grid array (LGA) solder bump dimensions. COMSOL [2] finite element analysis (FEA) simulations are conducted to predict the TC lifetime based on solder fatigue model. The simulated results agree with the experimental data, validating the proposed TC lifetime model.
Presenter: Shengke Zhang, Ph.D.
Poster Dialogue Session: August 29th, 1:30pm - 2:30pm
Comparison of Board-side and Back-side Thermal Management Techniques for eGAN® FETs in a Half-Bridge Configuration
GaN FET characteristics offer converter high power-density capabilities with fast switching and low on-resistance, however, they are physically smaller, and come in alternative package offerings, than their silicon counterparts. When employed in applications the result is higher heat flux density that limits the power processing capabilities of the converters. Various thermal strategies are necessary to leverage the potential of GaN FETs by lowering the thermal resistances both in a printed circuit board (PCB) and through external heat sinking. Configuration options using thermal vias, heat spreaders, heatsinks on either side of a PCB, and high-performance thermal interface materials (TIM) are investigated. Implementing these techniques can reduce thermal resistance from the junction to ambient (RθJA) by 30% without a heatsink and by over 60% with a heatsink.
Speaker: Adolfo Herrera, Ph.D.
Oral Session: August 29th, 3:05pm - 3:30pm
Validating Duty Cycle-Based Repetitive Gate and Drain Transient Overvoltage Specifications for GaN HEMTs
Repetitive transient overvoltage ringing is a common switching characteristic for GaN-based wide bandgap power converters. A 1% duty cycle overvoltage (DCOvervoltage) specification was previously proposed for drain turn-off and gate turn-on transients [1,2]. In this work, a comprehensive model is developed to account for the lifetime contributions from overvoltage ringing and nominal biasing. Resistive and inductive hard-switching circuits are implemented to measure RDS(on) in-situ, where the projected lifetimes validate the 1% DCOvervoltage for drain. Greater than 50 years of gate lifetime with 10 ppm failure rate are predicted by considering 1% DCOvervoltage, further validating the proposed specification.
Presenter: Shengke Zhang, Ph.D.
Oral Session: August 30th, 3:30pm - 3:55pm
Exclusive Sessions
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