GaN Talk a blog dedicated to crushing silicon
Term: LED Lighting
3 post(s) found

May 10, 2023

GaN Switching Frequency: Using Gallium Nitride Technology in Next-Generation High-Frequency Circuits

Renee Yawger, Director of Marketing

Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconductor that is used in the production of power devices as well as RF components and light-emitting diodes (LEDs). GaN switching frequency is substantially higher than silicon, enabling power electronics designers to create smaller, more efficient, and higher-performing systems that were previously challenging to achieve with silicon technologies. 

Apr 03, 2019

Exceeding 98% Efficiency in a Compact 48 V to 12 V, 900 W LLC Resonant Converter Using eGaN FETs

Rick Pierson, Senior Manager, Digital Marketing

Motivation

The rapid expansion of the computing and telecommunication market is demanding an ever more compact, efficient and high power density solution for intermediate bus converters. The LLC resonant converter is a remarkable candidate to provide a high power density and high-efficiency solution. eGaN® FETs with their ultra-low on-resistance and parasitic capacitances, benefit LLC resonant converters by significant loss reduction that is challenging when using Si MOSFETs. A 48 V to 12 V, 900 W, 1 MHz LLC DC to DC transformer (DCX) converter employing eGaN FETs such as EPC2053 and EPC2024 is demonstrated, yielding a peak efficiency of 98.4% and a power density exceeding 1500 W/in3.

Apr 07, 2017

GaN applications: The next step in power management growth

Rick Pierson, Senior Manager, Digital Marketing

This post was written by EDN senior technical editor, Steve Taranovich for the Power-management Design Center , How To Article section on APEC 2017. Originally published on April 03, 2017.”