GaN Wine Lounge

Space power systems must balance efficiency, thermal limits, and exceptionally clean power for sensitive payloads. Matthew Lumb, CEO of Polaris Semiconductor, explains how the Enhanced Linear Regulator (ELR), combined with radiation-hardened GaN FETs from EPC Space, aims to address this challenge. Demonstration boards support buck, boost, and inverting conversion with low noise and reduced dissipation, without inductors or switching-related EMI. Applications include RF, precision analog, cryogenic quantum systems, and harsh orbital environments; the roadmap includes radiation testing and greater integration.

Industry analyst Qian Luo discusses the forces reshaping power semiconductors, highlighting AI infrastructure and growing interest in drones and humanoid robotics. He sees gallium nitride (GaN) becoming a leading choice for AI data-center power conversion, while adoption expands in lower-voltage applications often served by silicon. Luo explains how EPC’s experience, system-level solutions, demonstration designs, and simulation support distinguish it in the market. Looking ahead, he points to robotics and drones as near-term growth areas, with electric vehicles among future opportunities.

GaN Technology has evolved at a steady, but rapid pace over the last 16 years since first going into mass production. EPC has developed seven generations of discrete transistors that have surpassed MOSFETs in every technical category with the latest generation opening new markets competing with MOSFETs at voltages between 40 V and 10 V. So, what comes next?

GaN is helping meet the growing power demands of AI data centers, where chips need more power in less space. EPC’s Alex Lidow and Cyntec’s Ian Chan discuss GaN’s advantages, the move toward 800V power systems, and the need for better magnetics, packaging, and integration. They also share the engineering challenges and technologies that could shape future AI, robotics, and autonomous systems.

In this interview, Stefan Werkstetter, VP of Sales EMEA at EPC, discusses the transition of the GaN market from early evaluation to volume adoption across Europe. He highlights high-volume automotive programs, AI-driven data center power supplies, and motor drive - especially e-bikes - as key growth engines. Werkstetter explains EPC’s “first time right” design process, extensive reliability database, and the dramatic gains in power density. He also outlines how evolving design guidelines and partial footprint standardization will shape GaN’s future success.

This interview with Marco Palma, Vice President of Motor Systems at EPC, explores how GaN technology is reshaping motor drives for humanoid robots and drones. Palma discusses the EPC 91132 reference board based on the EPC33110 IC, highlighting high power density, compact form factors, and advanced thermal management via topside cooling. He explains the importance of PWM frequency, dead time, and control algorithms, and outlines EPC’s scalable GaN inverter portfolio and future trends such as multi-phase motors and fully integrated GaN power ICs.

Maurizio Di Paolo Emilio speaks with Tobias Fuhr of Finepower about the evolution of power electronics and the impact of GaN technology. Fuhr highlights how EPC’s expanding portfolio, including complete motor control solutions, enables sophisticated applications such as humanoid robots. He discusses how GaN has revolutionized compact USB‑C chargers and enabled lighter, highly efficient converters in aerospace and avionics. Looking ahead, Fuhr envisions power electronics becoming “invisible,” a ubiquitous yet unseen engine of everyday life.

In this interview, EPC’s Maurizio Di Paolo Emilio speaks with AccoTEST Global Marketing Director Huipeng Liu about a decade of experience testing GaN and other wide bandgap devices. Liu explains why GaN must be treated as an IC, not a simple discrete, and describes AccoTEST’s multi-site, wafer-level test solutions. They discuss reliability challenges for AI data centers, key wafer-level parameters such as leakage and Rds(on), and why future breakthroughs in GaN will be driven primarily by applications.

In this interview, Episil Group chairman JH Shyu discusses the company’s role as a GaN foundry partner to EPC. He outlines key challenges in GaN manufacturing, including thermal management, dynamic Rds(on) degradation, EMI, and reliability for both AI servers and automotive applications. Shyu highlights scaling from 6‑inch to 8‑ and 12‑inch wafers, the transition toward vertical GaN, and the integration of all‑in‑one GaN power ICs as major milestones reshaping the power electronics industry.