Advancing GaN Reliability for Mission-Specific Applications
The rapid adoption of Gallium Nitride (GaN) devices in diverse industries requires continuous advancements in reliability research. EPC’s Phase 17 Reliability
Report provides comprehensive lifetime models and new reliability insights to help engineers optimize GaN performance under real-world conditions.
Why This Report Matters
This latest edition expands on previous models, introducing new physics-based methodologies to better predict GaN wear-out mechanisms and enhance lifetime projections.
The report translates complex reliability data into user-friendly formats, making it easier to apply these insights to mission-critical applications.
What's Covered in This Report?
Expanded Gate Lifetime Model
- Incorporates the effects of gate leakage current under different voltages and temperatures
- Introduces duty-cycle-based transient gate overvoltage rating (validated at 7 V for real-world applications)
Enhanced Drain Overvoltage Reliability
- New test validation data confirming GaN’s robustness under drain-source overvoltage stress
- Improved dynamic RDS(on) models for predicting long-term device performance
Pulsed Current Rating for High-Power Applications
- Detailed assessment of GaN’s pulsed current capabilities at varying gate drive voltages and temperatures
- Testing extended beyond 100 million pulses, proving minimal parametric shifts and suitability for LiDAR and high-power applications
Thermomechanical Stress Lifetime Model
- A new comprehensive model for temperature cycling (TC) and power cycling (PC) stress
- Accounts for die dimensions, bump shape, PCB properties, and ramp rates
- First-time inclusion of power cycling lifetime modeling for GaN devices
Application-Specific Reliability Data
- Solar Power – Applying test-to-fail methodology to predict failure mechanisms in PV systems
- DC-DC Converters – Stress testing for mission-specific GaN reliability in high-efficiency power conversion
- LiDAR Applications – Long-term stability testing under high-current pulsed conditions