Efficient Power Conversion (EPC) Corporation introduced its first enhancement-mode Gallium
Nitride (eGaN®) FETs in 2009 and since that time has published five reliability reports, as well
as a textbook covering the subject [1-6]. The first section of this paper reports on the qualification
testing of EPC’s eGaN FETs under a wide variety of stress conditions. The test matrix
covers the 40 V to 200 V eGaN FET families. The second section reports on the failure rate
predictions using acceleration factors derived by operating devices well outside of normal
operating conditions.
Rob Strittmatter Ph.D., Chunhua Zhou Ph.D., and Yanping Ma Ph.D., Efficient Power Conversion Corporation