Events

The Ascent of GaN Speaker: Alex Lidow, Ph.D., CEO and Co-founder, EPC

After more than 13 years of mass production, GaN-on-Si has gained widespread acceptance as the successor to the aging silicon MOSFET for voltage ranging between 40 V and 650 V. What, therefore, are the variables controlling the rate of growth of GaN power devices. We will dig into the experience, and lessons learned from the power MOSFET as well as the recent experiences with GaN in applications ranging from DC-DC conversion to motor drives and lidar in markets such as space, automotive, enterprise computing, and consumer products.

Panel Discussion: SiC and GaN Power Devices’ Reliability and Quality Panelists: Doug Bailey, Vice President Marketing & Applications Engineering, Power Integrations; Anup Bhalla, Chief Engineer, Power Devices, Qorvo; Thierry Bouchet, CEO, Wise Integration; Alex Lidow, CEO, Efficient Power Conversion; Guy Moxey, Senior Director Power Products, Wolfspeed

WBG semiconductors have helped improve the performance of power systems and cut down on the cost of their parts. Failure rates in the parts-per-billion level are necessary to compete in markets with stricter standards. The primary reliability issues that face WBG semiconductors like SiC and GaN, as well as the corresponding quality standards for high-performance designs in several mission-critical applications, will be covered in this panel discussion. Aspects including material quality, thermal management, high-power operation, qualification testing and long-term performance will be covered by each panelist.

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The Ascent of GaN Speaker: Alex Lidow, Ph.D., CEO and Co-founder, EPC

The latest gallium nitride technology are revolutionizing power management applications such as motor drives for drones, e-bikes, scooters and power tools; DC-DC converters and solar applications. Power electronics has been dominated by MOSFETs for almost 40 years and by the year 2000, MOSFETs had hit their theoretical performance limit and its progress had been slowed down with the major focus on pricing. As silicon devices are being made on a vertical technology, this makes it physically impossible to have two power devices in the same chip. In contrast, GaN-on-Si planar technology allows the integration of the power section with the control in the same die which opens significant performance opportunities with higher performance by an order of magnitude that is much better than their aging MOSFET ancestor. This has enabled users to significantly reduce costs, improve efficiency, shrink product size, offer new capabilities, and gain market share against their competitors.

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Using Test-to-Fail Methology to Predict How GaN Devices Can Last More Than 25 Years in Solar Applications Presenter: Shengke Zhang Ph.D.

Modern solar panels are demanding increasingly higher power density and longer operating lifetimes. Solar applications including power optimizers and microinverter are becoming the prevailing trend for increasing number of solar customers, where low voltage GaN power devices (VDS < 200V) are extensively used. Integration of high-power density into the same form factor and longer lifespan are becoming key challenges for market adoption. GaN power transistors and integrated circuits offer solutions that can make the solar power systems smaller, cooler, more efficient, and more reliable.

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Optimal Dead Time Selection in GaN FET Switching Leg Via Thermal Analysis Authors: Salvatore Musumeci, Fausto Stella, Vincenzo Barba and Marco Palma

Correct dead time selection is crucial in Gallium Nitride (GaN) devices having a significant impact on the overall performance, efficiency, and reliability of power electronic systems. Incorrect dead time selection can cause a variety of issues, including increased power losses, reduced efficiency, and increased device operating temperatures. This paper investigates the impact of dead time on the operating temperature of GaN devices employed in hard-switching converters. A measurement methodology where the dead time is selected to minimize the operating temperature of the hottest switch is proposed. Optimal dead time as a function of the device current is experimentally derived. Obtained data are preliminary discussed by comparing the optimal thermal derived dead time with the measured switching catachrestic of the device.

Accurate Analytical eGaN HEMT Parameterizable Matlab Model Based on LTspice Data or Datasheet from Manufacturer and Its Applications in Optimal Design Authors: Timothe Delaforge, Marco Palma and Michael De Rooij

This paper presents an accurate and parameterizable analytical modeling for Gallium Nitride high electron mobility transistor (GaN HEMT) implemented in Matlab. The proposed model is based on temporal resolution of an equivalent electrical circuit for both GaN HEMT internal waveforms and converter waveforms. The model is parameterizable to evaluate the impact of each design parameter on losses quickly and accurately. The GaN HEMT physical parameters come directly from suppliers LTspice model or can be fitted from datasheet. The model is as accurate as the original LTspice model and can be integrated in an automated design system for power electronic converters.

Tutorial: GaN FETs and GaN Integrated Circuits for DCDC and Motor Drives applications Speakers: Marco Palma and Michael De Rooij, Ph.D.

Gallium nitride (GaN) power semiconductors have seen increased adoption in many power-electronic applications. Recently GaN devices have made inroads into compact and efficient DCDC converters and BLDC motor drives with surprising benefits that include ultra-low audible emissions, small size, high DC to mechanical efficiency, reduced component count, and improved precision control when compared to MOSFET-based inverters.

The goal of this tutorial is to provide engineers with the tools and understanding needed to fully utilize the potential of GaN FETs and emerging GaN integrated circuits and be able to implement them in advanced DCDC converters and in BLDC motor drive applications. The seminar comprises four main sections; 1) An introduction to the important distinguishing characteristics of GaN FETs, 2) The fundamentals of designing with GaN FETs and ICs, 3) GaN-based DCDC and motor drive application examples demonstrating the techniques presented in section II, and 4) an update to the state-of-the-art GaN integration.

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