High Power-Density, Bi-Directional, 48 V to 12 V Converter using eGaN® FETs for next generation BEV’s
Speaker: : Michael de Rooij, Ph.D., Vice President of Applications Engineering
This work presents a high power-density LLC based system that addresses size, with a 23 mm x 18 mm x 10 mm volume, weighs just 15 grams and can deliver up to 750 W power for 12 V systems, with unrestricted voltage range from 11.0 V through 14.3 V, operating from a 48 V bus, with range of 36 V through 52 V.
Power Steering Application using eGaN Integrated Circuit
Speaker: Marco Palma, Director of Motor Drive Systems and Applications
In motor drive applications, GaN inverters allow the increase of the PWM frequency and the drastic reduction of dead times, allowing the removal of bulky electrolytic capacitors and the reduction of overall solution dimensions. These benefits result in a reduction in size, weight, and material cost, over equivalent MOSFET-based designs. This work presents recent developments in employing GaN integrated circuit devices in a multiple-three-phase motor power steering application that requires 48V or 24V nominal voltage and up to 10 ARMS in each stator phase winding.