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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling 12 V to 1.2 V Point of Load System Efficiency at 25 A output over 90%

Categories: Press Releases

EPC2100 GaN power transistor offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 93% at 10 A, and over 90.5% at 25 A when switching at 500 kHz and converting from 12 V to 1.2 V.

EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2100, the first commercially available enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

Each device within the EPC2100 half-bridge component has a voltage rating of 30 V. The upper FET has a typical RDS(on) of 6 mΩ, and the lower FET has a typical RDS(on) of 1.5 mΩ. The high-side FET is approximately one-fourth the size of the low-side device to optimize efficient DC-DC conversion in buck converters with a high VIN/VOUT ratio. The EPC2100 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6 mm x 2.3 mm for increased power density.

“Now designers have the first example of what’s to come with eGaN technology – a family of monolithic eGaN half-bridge devices that save space, improve efficiency, and lower system costs. As power conversion systems stretch into the multi-megahertz domain, the integration of discrete devices becomes increasingly important for high system efficiency and power density,” said Alex Lidow, EPC’s co-founder and CEO.

Development Board

The EPC9036 is 2” x 2” and contains one EPC2100 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation.

Price and Availability

The EPC2100 monolithic half-bridge price for 1K units is $5.81 each

The EPC9036 development boards are priced at $137.75 each

Both are available for immediate delivery from Digi-Key at

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]