Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) FETs and integrated circuits (ICs) are finding their way into many end user applications such as LIDAR, wireless charging, DC-DC conversion, RF base station transmission, satellite systems, and audio amplifiers.
Field reliability is the ultimate metric that corroborates the quality level of eGaN® FETs and ICs that have been deployed in customer applications. In our first installment we provided an overview of eGaN FET field reliability which included 6 years of volume production shipment, and greater than 17 billion total device hours recorded. A subsequent calculated Failure In Time (FIT – failures in 109 hours) of approximately 0.24 FITs shows excellent field reliability performance to date.
May 1, 2016