How To GaN: Introduction to Gallium Nitride (GaN) Transistor Technology Posted Tuesday, June 4, 2013 The first installment in a new monthly column by Alex Lidow, CEO of EPC, introduces the concept that GaN-on-silicon power devices could be a superior replacement for the aging power MOSFET. EEWeb.com By: Alex Lidow June, 2013 Related articles The New Silicon: EPC’s CEO on Why Gallium Nitride Will Be the Future of Power Management Devices How To GaN: Paralleling High Speed eGaN FETS for High Current Applications Highly Resonant Wireless Power Transfer System Teardown Efficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed Barriers EPC8000 Family Highlighted as “Green Product of the Month” in Bodo’s Power Systems