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Power systems and RF designers now have access to high performance GaN power transistors capable of amplification into the low GHz range, enabling innovative designs not achievable with silicon.
EL SEGUNDO, Calif. — September 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8000 family of products.
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