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Development Boards with 200 V eGaN FETs from Efficient Power Conversion (EPC) Enable High Efficiency up to 30 MHz

Development Boards with 200 V eGaN FETs from Efficient Power Conversion (EPC) Enable High Efficiency up to 30 MHz

EPC’s new development boards enable power systems designers to easily and quickly evaluate the high efficiency achieved with 200 V gallium nitride transistors in class-E amplifiers, current-mode class-D, and push-pull converters operating up to 30 MHz.

EL SEGUNDO, Calif.— January 2016 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces high efficiency, GaN-based differential mode development boards that can operate up to 30 MHz.

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