Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with a 100 V device that has the lowest on-resistance of any 100 V rad hard transistor currently available on the market.

EL SEGUNDO, Calif.— June 2022 — EPC announces the introduction of the EPC7018 radiation-hardened GaN FET. The EPC7018 is a 100 V, 3.9 mΩ, 345 A_Pulsed, rad-hard GaN FET in a small 13.9 mm² footprint. The EPC7018 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). The EPC7018, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, are offered in a chip-scale package, the same as the commercial eGaN^® FET and IC family.  Packaged versions will be available from EPC Space.

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with a 200 V device that boasts an ultra-low on-resistance and a tiny footprint.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC7007 radiation-hardened GaN FET. The EPC7007, a 200 V, 25 mΩ, 80 A_Pulsed, rad-hard GaN FET in a small 5.76 mm² footprint. The EPC7007 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

EPC Space, a joint venture company, will provide advanced, high-reliability, gallium nitride (GaN) power conversion solutions for critical spaceborne and other high reliability environments.

EL SEGUNDO, CA and BLACKSBURG, VA – June 2020 – Efficient Power Conversion (EPC) Corporation and VPT, Inc., A HEICO company (NYSE:HEI.A) (NYSE:HEI)  announce the establishment of EPC Space LLC, a joint venture focused on designing and manufacturing radiation hardened (Rad Hard) GaN-on-silicon transistors and ICs packaged, tested, and qualified for satellite and high-reliability applications.