The EPC9145 GaN-based inverter enhances the performance of the motor for range, precision, torque, and, as a bonus, eliminates the electrolytic capacitors for lower overall system cost and higher reliability. The extremely small size allows integration into the motor housing for the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9145, a 1 kW, 3-phase BLDC motor drive inverter using the EPC2206 eGaN^® FET

The EPC9163 is a two-phase, 48 V – 12 V bidirectional converter that delivers 2 kW with 96.5% efficiency in small solution size for mild-hybrid cars and battery power backup units.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9163, a 2 kW, two-phase 48 V – 12 V bidirectional converter that operates with 96.5 % efficiency in a very small footprint. The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 4 kW or three converters can be paralleled to achieve 6 kW. The board features eight EPC2218 100 V eGaN^® FETs and is controlled by a module that includes the Microchip dsPIC33CK256MP503 16-bit digital controller.

The ultra-fast transition EPC2034C eGaN^® FETs used on the EPC9150 enables high current pulses up to 220 A and pulse widths under 3 ns, thus allowing a lidar system to see farther, faster, and better.

EL SEGUNDO, Calif.— March 2021 — Efficient Power Conversion  (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET and in a small fraction of the area, energy, and cost. Thus, enhancing the overall performance, including accuracy, precision, and processing speed as well as the price of a lidar system.

Ultra-fast transition eGaN^® FETs from Efficient Power Conversion (EPC) on the EPC9144 drive high current pulses up to 28 A with pulse widths as low as 1.2 ns, enhancing the accuracy, precision, and processing speed of ToF and flash lidar systems.

EL SEGUNDO, Calif.— January, 2020 — EPC announces the availability of the EPC9144, a 15 V, 28 A high current pulsed laser diode driver demonstration board.

The EPC2051 offers power systems designers a 100 V, 25 mΩ, power transistor capable of 37 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 48V power converters, LiDAR, and LED lighting.

EL SEGUNDO, Calif. — July 2018 — Efficient Power Conversion (EPC) announces the EPC2051, a 100 V GaN transistor with a maximum R_DS(on) of 25 mΩ and a 37 A pulsed output current for high efficiency power conversion in a tiny 1.1mm² footprint.

The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum R_DS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

Superior characteristics of eGaN^® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, AirFuel^™ wireless power transfer systems.

EL SEGUNDO, Calif.—August 2017 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power charging kit, the EPC9120. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band).  The purpose of this demonstration kit is to simplify the evaluation process of using eGaN FETs for highly efficient wireless power transfer.  The EPC9120 utilizes the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with full power efficiency between 80% and 90% under various operating conditions.

EPC introduces EPC2045 and EPC2047 eGaN^® FETs that are half the size of prior generation eGaN transistors with significantly higher performance.

EL SEGUNDO, Calif. — March 2017 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN^®) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ, 100 V) and the EPC2047 (10 mΩ, 200 V) eGaN FETs. Applications for the EPC2045 include single stage 48 V to load Open Rack server architectures, point-of-load converters, USB-C, and LiDAR. Wireless charging, multi-level AC-DC power supplies, robotics, and solar micro inverters are example applications for the 200 V EPC2047.

eGaN^®power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable high power density converters.

EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of two eGaN FETs that raise the bar for power conversion performance. These products have a maximum operating temperature of 150°C and pulsed currents capabilities of 260 A (150 V EPC2033) and 140 A (EPC2034). Applications include DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

Efficient Power Conversion introduces the EPC2102, 60 V and EPC2103, 80 V half bridges, expanding its award winning family of gallium nitride power transistor products.

EL SEGUNDO, Calif. — January 2014 — EPC announces the EPC2102, 60 V and the , 80 V enhancement-mode monolithic GaN transistor half bridges.

EPC2027 eGaN^® FET offers power systems designers a 450 V power transistor capable of 4ns rise times for high frequency DC-DC converters and medical diagnostic instruments.

EL SEGUNDO, Calif. — January 2015 — EPC announces the EPC2027, a 450 V normally off (enhancement mode) power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by high voltage higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, solar power inverters, and LED lighting.

EPC9118 demonstrates size reduction and efficiency enhancement for power conversion readily achieved using high frequency switching eGaN^® FETs for supply voltages up to 48 V or more.

EL SEGUNDO, Calif.—October 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9118, a fully functional buck power conversion demonstration circuit. This board is a 30 V-60 V input to 5 V, 20 A maximum output current, 400 kHz buck converter. It features the EPC2001 and EPC2015 enhancement-mode (eGaN^®) field effect transistors (FETs), as well as the LTC3891 buck controller. This buck converter design is ideal for distributed power solutions in telecom, industrial, and medical applications.

eGaN^® power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable power converters with greater than 98% efficiency.

To tweet this news, copy and paste http://bit.ly/EPCXLPR1407 to your Twitter handle with #GaNFET

EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces the introduction of six new-generation power transistor products and corresponding development boards. Ranging from 30 V to 200 V, these products provide significant reduction in R_DS(on) greatly increasing their output current capability in applications such as high power density DC-DC converters, Point-of-Load (POL) converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

The superior characteristics of eGaN^® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.

EL SEGUNDO, Calif.—June, 2014 — Efficient Power Conversion Corporation (EPC) today announce the introduction of demonstration boards for wireless power transfer in an innovative high performance topology; Zero Voltage Switching (ZVS) Class-D. The EPC9506 and EPC9507 amplifier (source) boards utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with greater than 75% efficiency.

EPC9016 development board features 40 V, 33 A enhancement mode gallium nitride (eGaN^®) FETs in parallel operation increasing current capability by 67% and optimum layout techniques maximize efficiency.

EL SEGUNDO, Calif.— April, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9016 half-bridge development board for high current, high step-down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low-side (synchronous rectifier) field effect transistors (FETs) are connected in parallel since they will be conducting for a much longer period compared to the single high side (control) FET.

Award winning EPC9005 development board facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 eGaN FET

EL SEGUNDO, Calif. – November 2013 - Efficient Power Conversion Corporation (www.epc-co.com; www.epc-co.com.cn) announces that its EPC9005 development board has been recognized with two industry awards in China; namely, Optimized Development Award of the Top 10 Power Products Award 2013 presented by Electronics Product China and Leading Product Award of China Innovation Award 2013 presented by EDN China magazine.

EPC9102 showcases the performance that can be achieved using the EPC2001 eGaN FETs and the LM5113 eGaN FET driver from Texas Instruments

EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9102, a fully functional eighth brick converter. This board is a 36 V – 60 V input to 12 V output, 375 kHz phase-shifted full bridge (PSFB) eighth brick converter with 17 A maximum output current. The EPC9102 uses the 100 V EPC2001 eGaN FETs in conjunction with the recently introduced LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is the industry’s first driver to optimally drive and fully release the benefits of enhancement mode gallium nitride FETs. The EPC9102 demonstrates the performance capabilities of high switching frequency eGaN FETs when coupled with this eGaN driver.

EPC9101 demonstrates size reduction and efficiency enhancement for buck power conversion achieved using high frequency switching eGaN power transistors

EL SEGUNDO, Calif.—October 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9101, a fully functional buck power conversion demonstration circuit. This board is an 8 V-19 V input to 1.2 V, 18 A maximum output current, 1MHz buck converter. It uses the EPC2014 and EPC2015 eGaN FETs in conjunction with the recently introduced National LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is the industry’s first driver designed specifically for enhancement mode gallium nitride FETs. The EPC9101 demonstrates the reduced size and performance capabilities of high switching frequency eGaN FETs when coupled with this dedicated eGaN driver.