EPC9001C : 40 V Half-Bridge Development Board
The EPC9001C development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives, featuring the EPC2015C enhancement mode (eGaN®) field effect transistor (FET).
The purpose of this development board is to simplify the evaluation process of the EPC2015C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.
Status: Obsolete
The GaN Experts recommend EPC90132 for new designs