EPC9004C - Development Board

EPC9004C : 200 V Half-Bridge Development Board

The EPC9004C development board has a 200 V maximum device voltage, 2 A maximum output current, in a half-bridge topology with onboard gate drives, featuring the EPC2012C enhancement-mode (eGaN®) field effect transistor (FET)

The purpose of this development board is to simplify the evaluation process of the EPC2012C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

Status: Obsolete
Fully assembled reference design developed for testing and performance validation only, not available for sale.
For additional assistance, please contact a GaN Expert.
Ask and EPC Engineer a Question FAQ

Have a design question?
Ask a GaN Expert

EPC9004C WaveformsWaveforms for EPC9004C operation as a 150 V to 5 V / 2 A (100 kHz) buck converter
CH1: PWM Input – CH4: (VOUT) Switch node voltage
EPC9004C Parameters Table
* Assumes inductive load, maximum current depends on die temperature – actual maximum current will be subject to switching frequency, bus voltage and thermal cooling.
# Dependent on time needed to ‘refresh’ high side bootstrap supply voltage.