EPC9006C : 100 V Half-Bridge Development Board
The EPC9006C development board is a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2007C enhancement mode (eGaN®) field effect transistor (FET).
The purpose of this development board is to simplify the evaluation process of the EPC2007C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.
Status: Obsolete
Fully assembled reference design developed for testing and performance validation only, not available for sale.
For additional assistance, please contact a GaN Expert.