EPC9010C - Development Board

EPC9010C : 100 V Half-Bridge Development Board

The EPC9010C development board has a 100 V maximum device voltage, 7 A maximum output current, in a half-bridge topology with onboard gate drives, featuring the EPC2016C enhancement-mode (eGaN®) field effect transistor (FET)

The purpose of this development board is to simplify the evaluation process of the EPC2016C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

Status: Obsolete
The GaN Experts recommend EPC9092 for new designs
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EPC9010C Waveforms
Waveforms for EPC9010C operation as a 48 V to 5 V / 7 A (1000 kHz) buck converter
CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage.
EPC9010C Parameters Table
(1) Maximum input voltage depends on inductive loading, maximum switch node ringing must be kept under 100 V for EPC2016C.
(2) Maximum current depends on die temperature – actual maximum current is affected by switching frequency, bus voltage and thermal cooling.
(3) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.