EPC90121: 350 V, 4 A Half-Bridge Development Board
The EPC90121 development board is a 350 V maximum device voltage, 4 A maximum output current, half bridge
with onboard gate drives, featuring the EPC2050
GaN field effect transistor (FET). The purpose of this development board is to simplify the evaluation
process of the EPC2050 by including all the critical components on a single board that can be easily
connected into most existing converter topologies.
The EPC90121 development board is 2” x 2” and contains two EPC2050 GaN FETs in a half bridge configuration
with the On-Semi NCP51820 gate driver. The board also contains all critical components and the layout
supports optimal switching performance. There are also various probe points to facilitate simple waveform
measurement and efficiency calculation.