EPC90122 - Development Board

EPC90122: 80 V, 40 A Development Board

EPC90122 Development Board

The EPC90122 development board is a 80 V maximum device voltage, 40 A maximum output current, half bridge with onboard gate drives, featuring the EPC2206 enhancement mode (eGaN®) field effect transistor (FET).

The EPC90122 development board is 2” x 2” and contains two EPC2206 eGaN FETs in a half bridge configuration using the Texas Instruments LMG1205 gate driver.

To simplify the evaluation process of the EPC2206 GaN FET, all the critical components and layout for optimal switching performance are implemented. Video: How to Turn an EPC Development Board into a Prototype

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