EPC90139: 40 V, 40 A Development Board
The EPC90139 development board is a 40 V maximum device voltage, 40 A maximum output current, half bridge
featuring the EPC2069 GaN field effect transistor
(FET). The purpose of this development board is to simplify the evaluation process of the EPC2069 by
including all the critical components on a single board that can be easily connected into most existing
converter topologies.
The EPC90139 development board is 2” x 2” and contains two EPC2069 GaN FETs and one EPC2038 GaN FET used to augment the bootstrap
supply. The EPC90139 features the uP1966E
gate driver. The board also contains all critical components, and the layout supports optimal switching
performance. There are also various probe points to facilitate simple waveform measurement and efficiency
calculation.
Status: Obsolete
The GaN Experts recommend EPC90138 for new designs