EPC90143: 150 V, 25 A GaN-based half-bridge development board

EPC90143 GaN Development Board

The EPC90143 is a half-bridge development board with onboard gate drive featuring the 150 V rated EPC2305 eGaN®FET. The purpose of this development board is to simplify the evaluation process of the EPC2305 by including all the critical components on a single board that can be easily connected into most existing converter topologies.

The EPC90143 development board measures 2” x 2” and contains two EPC2305 GaN FETs in a half bridge configuration. The EPC90143 features the Onsemi NCP51820 gate driver. The board contains all critical components, and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

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