EPC90148: 150 V, 12 A Half-Bridge Development
Board Featuring EPC2308
The EPC90148 development board is a 150 V maximum device voltage, 12 A maximum output current, half bridge featuring the EPC2308 eGaN®FET. The purpose of this development board is to simplify the evaluation process of the EPC2308 by including all the critical components on a single board that can be easily connected into most existing converter topologies.
The EPC90148 development board is 2” x 2” and contains two EPC2308 GaN FETs in a half bridge configuration and one EPC2038 GaN FET used to augment the bootstrap supply. The EPC90148 features the uPI Semiconductor uP1966E gate driver. The board also contains all critical components and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.