EPC90148: 150 V, 12 A Half-Bridge Development
Board Featuring EPC2308
The EPC90148 development board is a 150 V maximum device voltage, 12 A maximum output current, half bridge
featuring the EPC2308 eGaN®FET. The
purpose of this development board is to simplify the evaluation process of the EPC2308 by including all the
critical components on a single board that can be easily connected into most existing converter topologies.
The EPC90148 development board is 2” x 2” and contains two EPC2308 GaN FETs in a half bridge configuration and
one EPC2038 GaN FET used to augment the bootstrap supply. The EPC90148 features the uPI Semiconductor
uP1966E gate driver. The board also contains all critical components and the layout supports optimal
switching performance. There are also various probe points to facilitate simple waveform measurement and
efficiency calculation.