EPC90148: 150 V, 30 A Half-Bridge Development
Board Featuring EPC2308
The EPC90148 is a half-bridge development board with onboard gate drive featuring the 150 V rated EPC2308 eGaN®FET. The purpose of this development board is to simplify the evaluation process of the EPC2308 by including all the critical components on a single board that can be easily connected into most existing converter topologies.
The EPC90148 development board measures 2” x 2” and contains two EPC2308 GaN FETs in a half bridge configuration. The EPC90148 features the Onsemi NCP51820 gate driver. The board contains all critical components, and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.