EPC2030 - Enhancement Mode Power Transistor

V_DS, 40 V
R_DS(on), 2.4 mΩ
I_D, 48 A
Pulsed I_D, 490 A
RoHS 6/6, Halogen Free

EPC2030 Enhancement Mode GaN Power Transistor

Die Size: 4.6 mm x 2.6 mm

Applications

DC-DC Converters
Point-of-Load
Synchronous Rectification

Benefits

Higher Switching Frequency – Lower switching losses and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: Obsolete
Please consider potential alternative devices EPC2067, EPC2031, or contact EPC via Ask a GaN Expert to discuss an alternative solution.