EPC1013 - Enhancement Mode Power Transistor

VDS, 150 V
RDS(on), 100 mΩ
ID, 3 A

EPC1013 Enhancement Mode GaN Power Transistor
Die Size: 1.7 mm x 0.9 mm


  • High Speed DC-DC Conversion
  • Hard Switched and High Frequency Circuits
  • Class D Audio


  • Ultra High Efficiency
  • Ultra Low RDS(on)
  • Ultra Low QG
  • Ultra small footprint
Status: Obsolete
Use EPC2012 for new designs
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