EPC2010C - Enhancement Mode Power Transistor

VDS, 200 V
RDS(on), 25 mΩ
ID, 22 A
Pulsed ID, 90 A
RoHS 6/6,
Halogen Free

EPC2010C Enhancement Mode GaN Power Transistor
Die Size: 3.6 mm x 1.6 mm


  • DC-DC Converters
  • Isolated DC-DC Converters
  • BLDC Motor Drives
  • Sync rectification for AC-DC & DC-DC
  • High Frequency Hard Switching and Soft Switching
  • Class D Audio
  • LiDAR/Pulsed Power Applications


  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Not Recommended for New Designs (NRND)
The GaN Experts recommend EPC2207 for new designs
Ask and EPC Engineer a Question FAQ

Have a question about EPC eGaN FETs and ICs?
Ask a GaN Expert