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EPC2024 - Enhancement Mode Power Transistor
V
DS
, 40 V
R
DS(on)
, 1.5 mΩ
I
D
, 90 A
Pulsed I
D
, 560 A
T
J
150°C
RoHS 6/6, Halogen Free
Die Size: 6.05 mm x 2.3 mm
Applications
DC-DC Converters
Motor Drive
Industrial Automation
Synchronous Rectification
Inrush Protection
Point-of-Load (POL) Converters
Benefits
Higher Switching Frequency
– Lower switching losses and lower drive power
Higher Efficiency
– Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint
- Higher power density
Lower R
DS(on)
- Higher current operation
Status:
Active
The GaN Experts recommend
EPC2067
for new designs
Datasheet
EPC2024 Datasheet
Evaluation Boards
EPC9032
EPC9149
Quality & Reliability
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Application Notes
How to Design a High-Efficiency 48 V, 1 kW LLC Resonant Converter in a 1/8
th
Brick Size Using eGaN FETs
Exceeding 98% Efficiency in a Compact 48 V to 12 V, 900 W LLC Resonant Converter Using eGaN FETs
Assembling eGaN FETs
Quick Reference - Die Attach Procedure
Quick Reference - Die Removal Procedure
Using eGaN FETs
AN017: Fourth Generation eGaN FETs Widen the Performance Gap with the Aging MOSFET
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Related Videos
Generation 4 eGaN
®
FETs
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