EPC2033 - Enhancement Mode Power Transistor

V_DS, 150 V
R_DS(on), 7 mΩ
I_D, 48 A
Pulsed I_D, 260 A
RoHS 6/6, Halogen Free

Die Size: 4.6 mm x 2.6 mm

Higher Switching Frequency – Lower switching losses and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: New Device Offered (NDO)
The GaN Experts recommend EPC2059 for new designs

Design Resources

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