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EPC2039 - Enhancement Mode Power Transistor
V
DS
, 80 V
R
DS(on)
, 25 mΩ
I
D
, 6.8 A
Pulsed I
D
, 50 A
RoHS 6/6, Halogen Free
Die Size: 1.35 mm x 1.35 mm
Applications
DC-DC Converters
Isolated DC-DC Converters
BLDC Motor Drives
Sync rectification for AC-DC & DC-DC
Wireless Power Transfer
LiDAR/Pulsed Power Applications
Benefits
Higher Switching Frequency
– Lower switching losses and lower drive power
Higher Efficiency
– Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint
- Higher power density
Status:
New Device Offered (NDO)
The GaN Experts recommend
EPC2214
for new designs
NDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.
Datasheet
EPC2039 Datasheet
Evaluation Boards
EPC9057
Quality & Reliability
Qualification Report
Reliability Reports
RoHS Statement
REACH Statement
Counterfeit Statement
Conflict Mineral Statement
Materials Declaration
Design Resources
Application Notes
Assembling eGaN FETs
Quick Reference - Die Attach Procedure
Quick Reference - Die Removal Procedure
Using eGaN FETs
Design Examples
TIDA-01634
Device Models
PSPICE (.net)
TSPICE (.sp)
LTSPICE (.zip)
Spectre Model (.scs)
Altium Library (.zip)
Thermal Model
STEP
Product Change Notice
PCN200801 - Manufacturing Site Alternate - Assembly Back End Tape and Reel at Ardentec
PCN200601 - Manufacturing Site Alternate - Wafer Probe Testing
PCN180501 - Manufacturing Site Alternate - Assembly Back End Tape and Reel
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