EPC2059: 170 V, 102 A Enhancement-Mode GaN Power Transistor

V_DS, 170 V
R_DS(on), 6.8 mΩ
I_D, 24 A
Pulsed I_D, 102 A
RoHS 6/6, Halogen Free

Die Size: 2.8 mm x 1.4 mm

Higher Switching Frequency – Lower switching losses and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: Preferred

Start your design today with these low cost evaluation options:

170 V, 17 A half-bridge evaluation

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