EPC2100 - Enhancement Mode GaN Power Transistor Half Bridge

V_DS, 30 V
R_DS(on),
8.2 mΩ (Q1, Control FET),
2.1 mΩ (Q2, Sync FET)
I_D, 10 A (Q1), 40 A (Q2)
Pulsed I_D, 100 A (Q1), 400 A (Q2)
RoHS 6/6, Halogen Free

Die Size: 6.05 mm x 2.3 mm

Recipient of Electronic Products
"Product of the Year" Award

Applications

DC-DC Converters
Point-of-Load (POL) Converters

Benefits

Higher Switching Frequency – Lower switching losses, lower parasitic inductance, and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: Active