EPC2105 - Enhancement Mode GaN Power Transistor Half Bridge

VDS, 80 V
RDS(on),
14.5 mΩ (Q1, Control FET),
3.6 mΩ (Q2, Sync FET)
ID, 10 A (Q1), 40 A (Q2)
Pulsed ID, 70 A (Q1), 300 A (Q2)
RoHS 6/6, Halogen Free

EPC2105 Enhancement Mode GaN Power Transistor
Die Size: 6.05 mm x 2.3 mm

Applications

  • DC-DC Converters
  • BLDC Motor Drives

Benefits

  • Higher Switching Frequency – Lower switching losses, lower parasitic inductance, and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Active

Datasheet

Evaluation Boards

Quality & Reliability

Design Resources

Application Notes

Device Models

Design Tools

Product Change Notice


Buy Now
Qty Unit Price(USD)

In Stock

View Cart
Find Distributor
Ask an EPC GaN Engineer a Question